Self‐recovery function of p(1×1)‐Sc‐O/W(100) system used as Schottky emitter

The effects of heating temperature for the preparation of an Sc‐O/W(100) surface were investigated. Surface properties of the Sc‐O/W(100) surface prepared by heating at ∼1600 and ∼1700 K were significantly different from those prepared at ∼1500 K, which is the operating temperature of the Sc‐O/W(100) emitter. By heating at ∼1700 K the p(1×1) structure formed by Sc–O complexes was confirmed, whereas the p(2×1)‐p(1×2) double‐domain structure was obtained by heating at ∼1500 K. The surface properties prepared by heating at ∼1700 K were found to be very stable, and the surface has a self‐recovery function against residual gas ion sputtering at the operating temperature of the emitter. The present results strongly suggested that pretreatment of the Sc‐O/W(100) emitter by heating at ∼1700 K and device operation at ∼1500 K result in high reproducibility of the superior electron emission property of the Sc‐O/W(100) emitter. Copyright © 2005 John Wiley & Sons, Ltd.