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Self‐recovery function of p(1×1)‐Sc‐O/W(100) system used as Schottky emitter
Author(s) -
Iida S.,
Nagatomi T.,
Takai Y.
Publication year - 2005
Publication title -
surface and interface analysis
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.52
H-Index - 90
eISSN - 1096-9918
pISSN - 0142-2421
DOI - 10.1002/sia.1942
Subject(s) - common emitter , analytical chemistry (journal) , ion , chemistry , materials science , optoelectronics , chromatography , organic chemistry
The effects of heating temperature for the preparation of an Sc‐O/W(100) surface were investigated. Surface properties of the Sc‐O/W(100) surface prepared by heating at ∼1600 and ∼1700 K were significantly different from those prepared at ∼1500 K, which is the operating temperature of the Sc‐O/W(100) emitter. By heating at ∼1700 K the p(1×1) structure formed by Sc–O complexes was confirmed, whereas the p(2×1)‐p(1×2) double‐domain structure was obtained by heating at ∼1500 K. The surface properties prepared by heating at ∼1700 K were found to be very stable, and the surface has a self‐recovery function against residual gas ion sputtering at the operating temperature of the emitter. The present results strongly suggested that pretreatment of the Sc‐O/W(100) emitter by heating at ∼1700 K and device operation at ∼1500 K result in high reproducibility of the superior electron emission property of the Sc‐O/W(100) emitter. Copyright © 2005 John Wiley & Sons, Ltd.