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Manipulation experiments on Si(111)7 × 7 by scanning tunnelling microscopy
Author(s) -
Kraus A.,
Hanbücken M.,
Koshikawa T.,
Neddermeyer H.
Publication year - 2005
Publication title -
surface and interface analysis
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.52
H-Index - 90
eISSN - 1096-9918
pISSN - 0142-2421
DOI - 10.1002/sia.1940
Subject(s) - quantum tunnelling , scanning tunneling microscope , desorption , atomic units , microscopy , voltage , materials science , chemistry , analytical chemistry (journal) , nanotechnology , optics , optoelectronics , physics , adsorption , quantum mechanics , chromatography
We describe our results on atomic‐scale manipulation of clean and H‐covered Si(111) surfaces by using scanning tunnelling microscopy. In particular, we focus on the manipulation of surface atoms by using a well‐defined distance decrease between sample and tip, with the sample‐tip voltage switched off. For comparison we also applied voltage pulses to the tip and recorded the tunnelling current simultaneously. For H‐covered Si(111) surfaces the desorption of H is associated with a dramatic current increase. For Si(111)7 × 7, the removed Si adatom very often is found in a neighbouring 7 × 7 unit cell half, where it fluctuates above rest atom sites already at room temperature. Copyright © 2005 John Wiley & Sons, Ltd.