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X‐ray photoelectron spectroscopic analysis of growth and thermal stability of palladium ultra thin films on alumina/NiAl(110)
Author(s) -
Song Weijie,
Yoshitake Michiko,
Lay Thi Thi
Publication year - 2004
Publication title -
surface and interface analysis
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.52
H-Index - 90
eISSN - 1096-9918
pISSN - 0142-2421
DOI - 10.1002/sia.1859
Subject(s) - nial , x ray photoelectron spectroscopy , palladium , thermal stability , substrate (aquarium) , layer (electronics) , materials science , thin film , catalysis , deposition (geology) , intermetallic , analytical chemistry (journal) , chemical engineering , chemistry , metallurgy , nanotechnology , alloy , organic chemistry , paleontology , oceanography , sediment , engineering , biology , geology
We have studied the growth and thermal stability of Pd ultra‐thin films on Al 2 O 3 /NiAl(110) in situ using x‐ray photoelectron spectroscopy. The results showed that Pd grew in a nearly layer‐by‐layer manner on the Al 2 O 3 /NiAl (110) surface at a deposition rate of 0.2 Å/min. No strong interaction between the Pd over‐layer and the substrate was observed during initial growth. After high‐temperature treatments, Pd diffused into the substrate and the alumina layer thickness increased significantly. Palladium served as a catalyst for this reaction when the temperature was lower than 570 K; PdO formed when the temperature was higher than 670 K. Copyright © 2004 John Wiley & Sons, Ltd.