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Wettability and interfacial reactions in Al/TiO 2
Author(s) -
Sobczak N.,
Stobierski L.,
Radziwill W.,
Ksiazek M.,
Warmuzek M.
Publication year - 2004
Publication title -
surface and interface analysis
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.52
H-Index - 90
eISSN - 1096-9918
pISSN - 0142-2421
DOI - 10.1002/sia.1838
Subject(s) - sessile drop technique , wetting , contact angle , drop (telecommunication) , crystallite , oxide , chemical engineering , chemistry , characterization (materials science) , aluminium oxide , materials science , metallurgy , composite material , nanotechnology , mechanical engineering , engineering
The effects of temperature and testing procedure on the wetting properties of molten Al on polycrystalline TiO 2 substrates were studied by a sessile drop method in vacuum at 1173–1373 K. For the common contact heating procedure, oxidized molten Al wets titania at T > 1210 K. The removal of the oxide film from the Al drop by means of a capillary purification procedure makes the Al/TiO 2 couple wettable at 1173 K. The structure and chemistry characterization of Al/TiO 2 interfaces shows that molten Al reacts with TiO 2 to form fine alumina particles and Ti, which subsequently is dissolved in the Al drop. However, this reaction is remarkable at 1373 K only and much higher temperatures are required for successful reactive synthesis of Al/Al 2 O 3 composites. Copyright © 2004 John Wiley & Sons, Ltd.