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Preparation of ultrathin HfO 2 films and comparison of HfO 2 /SiO 2 /Si interfacial structures
Author(s) -
Tan R. Q.,
Azuma Y.,
Fujimoto T.,
Fan J. W.,
Kojima I.
Publication year - 2004
Publication title -
surface and interface analysis
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.52
H-Index - 90
eISSN - 1096-9918
pISSN - 0142-2421
DOI - 10.1002/sia.1824
Subject(s) - x ray photoelectron spectroscopy , sputtering , stoichiometry , auger , materials science , wafer , silicate , analytical chemistry (journal) , metal , thin film , chemical engineering , chemistry , nanotechnology , metallurgy , physics , atomic physics , chromatography , engineering
Stoichiometric HfO 2 films were successfully prepared using both thermal oxidation of Hf metal film and direct reactive sputtering deposited on native SiO 2 /Si wafer. Angle‐resolved x‐ray photoelectron spectroscopy, Auger depth profiling and grazing incident x‐ray reflectivity have been exploited to study the interfacial structures of the generated HfO 2 films. A thinner interface (about 1.2 nm) of Hf‐rich silicates is formed using thermal oxidation, while the reactive sputtering deposition leads to a thicker (about 3.2 nm) Si‐rich interface. The results of binding energy, chemical composition, thickness and density all indicate that both interfaces have a graded structure where the concentration of Hf in the silicate interlayer decreases gradually along the depth. Copyright © 2004 John Wiley & Sons, Ltd.