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Epitaxial growth of BaO film on a Ti buffered MgO(100) surface using low‐energy neutral scattering
Author(s) -
Kawanowa Hitoshi,
Mori Daisuke,
Gotoh Yoshihiko,
Souda Ryutaro
Publication year - 2004
Publication title -
surface and interface analysis
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.52
H-Index - 90
eISSN - 1096-9918
pISSN - 0142-2421
DOI - 10.1002/sia.1822
Subject(s) - epitaxy , polar , scattering , spectroscopy , atom (system on chip) , materials science , surface (topology) , analytical chemistry (journal) , crystallography , chemistry , optics , nanotechnology , layer (electronics) , physics , geometry , mathematics , quantum mechanics , astronomy , chromatography , computer science , embedded system
The atomic structure of the BaO film formed on the Ti buffered MgO(100) surface has been investigated by low‐energy neutral scattering spectroscopy (LENS). The LENS was developed for surface structure and composition analyses particularly of highly insulating materials. The polar angle dependences of scattered He 0 intensities indicate that the Ba and O atoms in the BaO unit locate on the missing Ti site and on top of the Ti atom, respectively, in the TiO 2 unit formed on the MgO(001) surface and the spacing between the BaO and TiO layers is about 0.15 nm, which is smaller than that of BaTiO 3 ( c /2 = 0.20 nm) by 0.05 nm. Copyright © 2004 John Wiley & Sons, Ltd.