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Surface analysis of (NH 2 ) 2 CS‐treated GaP(001) by AES and XPS
Author(s) -
Liu K. Z.,
Suzuki Y.,
Fukuda Y.
Publication year - 2004
Publication title -
surface and interface analysis
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.52
H-Index - 90
eISSN - 1096-9918
pISSN - 0142-2421
DOI - 10.1002/sia.1813
Subject(s) - x ray photoelectron spectroscopy , auger electron spectroscopy , sulfur , chemistry , adsorption , annealing (glass) , nitrogen , analytical chemistry (journal) , molecule , inorganic chemistry , materials science , metallurgy , chemical engineering , organic chemistry , physics , nuclear physics , engineering
A GaP(001) surface treated by (NH 2 ) 2 CS/H + solution has been studied by Auger electron spectroscopy (AES) and XPS. The AES result indicates that the GaP(001) surface can be sulfurized by (NH 2 ) 2 CS/H + solution. Oxygen and nitrogen could be almost removed upon annealing at 550°C. The sulfur on the surface is stable below 550°C but a significant amount of carbon is left. XPS spectra of C 1s and N 1s indicate that most of the (NH 2 ) 2 CS molecules are adsorbed molecularly on the surface at RT, which is consistent with the AES result. It is found that sulfur is bonded mainly to Ga atoms and also bonded to phosphorus. The XPS and AES results indicate that gallium and phosphorus oxides, which can be almost removed from the surface at 550°C, exist on the passivated surface. Copyright © 2004 John Wiley & Sons, Ltd.