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Elastic electron backscattering from silicon surfaces: effect of charge‐carrier concentration
Author(s) -
Zemek J.,
Jiricek P.,
Lesiak B.,
Jablonski A.
Publication year - 2004
Publication title -
surface and interface analysis
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.52
H-Index - 90
eISSN - 1096-9918
pISSN - 0142-2421
DOI - 10.1002/sia.1770
Subject(s) - doping , electron , scanning electron microscope , charge carrier , silicon , semiconductor , free electron model , wafer , materials science , conductivity , electrical resistivity and conductivity , chemistry , analytical chemistry (journal) , atomic physics , condensed matter physics , physics , nanotechnology , optoelectronics , composite material , chromatography , quantum mechanics
Silicon wafers, p‐ and n‐doped with different free‐carrier charge concentrations, were selected as model materials to study a possible influence of charge‐carrier concentrations (or electrical conductivity) on measured elastic electron backscattering probabilities and electron inelastic mean free paths determined by elastic peak electron spectroscopy. This research is motivated by contrast changes frequently observed in scanning electron microscopy of semiconductor structures with different types of doping (p‐ and/or n‐) and/or different electrical conductivities. The results show that the measured elastic electron backscattering probabilities and the inelastic mean free paths differ only within experimental uncertainties. They are independent of the type (p‐ and/or n‐) of doping and the free‐carrier charge concentration. Copyright © 2004 John Wiley & Sons, Ltd.