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Sputtering rate measurements of some transition metal silicides and comparison with those of the elements
Author(s) -
Yoshitake Michiko,
Yamauchi Yasuhiro,
Bose Chandra
Publication year - 2004
Publication title -
surface and interface analysis
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.52
H-Index - 90
eISSN - 1096-9918
pISSN - 0142-2421
DOI - 10.1002/sia.1768
Subject(s) - sputtering , tungsten , silicide , yield (engineering) , materials science , transition metal , metal , nickel , metallurgy , titanium , analytical chemistry (journal) , silicon , chemistry , thin film , nanotechnology , biochemistry , chromatography , catalysis
Sputtering rates of nickel, cobalt, titanium, and tungsten silicides for Ar + ions of 0.5–4 keV energy at a normal incidence were measured by a conventional method. Sputtering yields were calculated by approximating the atomic density of specimens from the bulk crystal structures. The sputtering yields were compared with those of pure elements in the silicides. It was found that a linear combination of the sputtering yield of each component agreed with the sputtering yields of the silicides except for tungsten silicide, in spite of the existence of preferential sputtering. Copyright © 2004 John Wiley & Sons, Ltd.