Premium
Experimental evidence of resonant field emission from ultrathin amorphous diamond thin film
Author(s) -
She J. C.,
Xu N. S.,
Deng S. Z.,
Chen J.,
Li Z. B.,
Huq S. E.,
Wang L
Publication year - 2004
Publication title -
surface and interface analysis
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.52
H-Index - 90
eISSN - 1096-9918
pISSN - 0142-2421
DOI - 10.1002/sia.1720
Subject(s) - amorphous solid , field electron emission , diamond , materials science , thin film , amorphous carbon , optoelectronics , quantum tunnelling , optics , nanotechnology , analytical chemistry (journal) , electron , chemistry , crystallography , composite material , physics , quantum mechanics , chromatography
Resonant field electron emission was observed from amorphous diamond thin film. An ultrathin, i.e. ∼2 nm, amorphous diamond thin film highly localize on a single sharp Si tip apex was used for the experiments. Tip specimens were fabricated by state‐of‐the‐art microfabrication techniques, including high‐resolution electron beam lithography, plasma dry etching and local amorphous diamond deposition on the tip apex. It was observed from current–field ( I–E ) characteristics that in the applied macro‐field of typically 11–12 MV m −1 there are reversible and relatively strong current peaks, in contrast to the normal current instability phenomenon. The results confirm the effect of resonant tunnelling from amorphous diamond thin films. Copyright © 2004 John Wiley & Sons, Ltd.