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Dependence of interfacial excess on the threshold value of the isoconcentration surface
Author(s) -
Yoon Kevin E.,
Noebe Ronald D.,
Hellman Olof C.,
Seidman David N.
Publication year - 2004
Publication title -
surface and interface analysis
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.52
H-Index - 90
eISSN - 1096-9918
pISSN - 0142-2421
DOI - 10.1002/sia.1708
Subject(s) - chemistry , superalloy , surface (topology) , alloy , value (mathematics) , analytical chemistry (journal) , thermodynamics , chromatography , physics , geometry , computer science , mathematics , organic chemistry , machine learning
The proximity histogram (or proxigram for short) is used for analyzing data collected by a three‐dimensional atom probe microscope. The interfacial excess of Re (2.41 ± 0.68 atoms nm −2 ) is calculated by employing a proxigram in a completely geometrically independent way for γ/γ′ interfaces in René N6, a third‐generation single‐crystal Ni‐based superalloy. A possible dependence of interfacial excess on the variation of the threshold value of an isoconcentration surface is investigated using the data collected for René N6 alloy. It is demonstrated that the dependence of the interfacial excess value on the threshold value of the isoconcentration surface is weak. Copyright © 2004 John Wiley & Sons, Ltd.