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Ge molecular beam epitaxy on Si(113): surface structures, nanowires and nanodots
Author(s) -
Zhang Zhaohui,
Sumitomo Koji,
Omi Hiroo,
Ogino Toshio,
Zhu Xing
Publication year - 2004
Publication title -
surface and interface analysis
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.52
H-Index - 90
eISSN - 1096-9918
pISSN - 0142-2421
DOI - 10.1002/sia.1664
Subject(s) - nanodot , epitaxy , nanowire , molecular beam epitaxy , scanning tunneling microscope , materials science , nanotechnology , layer (electronics) , optoelectronics , germanium , relaxation (psychology) , silicon , psychology , social psychology
By performing epitaxial growth of Ge on Si(113) layer by layer, observed using scanning tunnelling microscopy, we show the Ge/Si(113) surface structure and island shape transition with an increase of Ge coverage and we discuss the transition in terms of epitaxial stress evolution and relaxation of the epitaxial morphologies. Nanofeatures of Ge epitaxial islands, such as nanowires and nanodots, are highlighted. Copyright © 2004 John Wiley & Sons, Ltd.