Morphological evolution of erbium disilicide nanowires on Si(001) | Zendy

Yang Jianshu | Zendy; Cai Qun | Zendy; Wang X.D. | Zendy; Koch R. | Zendy

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Morphological evolution of erbium disilicide nanowires on Si(001)

Author(s) -

Yang Jianshu,

Cai Qun,

Wang X.D.,

Koch R.

Publication year - 2004

Publication title -

surface and interface analysis

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.52

H-Index - 90

eISSN - 1096-9918

pISSN - 0142-2421

DOI - 10.1002/sia.1662

Subject(s) - erbium , nanowire , materials science , nanotechnology , metallurgy , optoelectronics , doping

The morphological evolution of ErSi 2 nanowires on Si(001) with Er coverage was investigated by scanning tunnelling microscopy, low‐energy electron diffraction and x‐ray diffraction. At low Er coverages, elongated ErSi 2 nanowires in a hexagonal crystal structure are formed. The nanowires are exclusively oriented perpendicular to the dimer rows of the Si(001) substrate, thus suggesting a method to control the nanowire arrangement via the substrate configuration. At 3 ML of Er rectangular islands with flat tops are observed, which crystallize in the tetragonal lattice of ErSi 2 . Our experiments suggest that the structural transformation from hexagonal to tetragonal takes place when the nanostructures reach the height of the c ‐axis of the tetragonal unit cell. Copyright © 2004 John Wiley & Sons, Ltd.

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