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Comparative thickness measurements of SiO 2 /Si films for thicknesses less than 10 nm
Author(s) -
Jach T.,
Dura J. A.,
Nguyen N. V.,
Swider J.,
Cappello G.,
Richter C.
Publication year - 2004
Publication title -
surface and interface analysis
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.52
H-Index - 90
eISSN - 1096-9918
pISSN - 0142-2421
DOI - 10.1002/sia.1641
Subject(s) - reflectometry , x ray photoelectron spectroscopy , ellipsometry , neutron reflectometry , materials science , analytical chemistry (journal) , neutron , dielectric , thin film , optics , chemistry , nuclear magnetic resonance , optoelectronics , neutron scattering , nanotechnology , physics , small angle neutron scattering , nuclear physics , time domain , chromatography , computer science , computer vision
We report on a comparative measurement of SiO 2 /Si dielectric film thickness ( t < 10 nm) using grazing‐incidence x‐ray photoelectron spectroscopy, neutron reflectometry and spectroscopic ellipsometry. Samples with nominal thicknesses of 3–7 nm were characterized by XPS with grazing‐incidence x‐rays at 1.8 keV, by cold neutron reflectometry (λ = 0.475 nm) and by spectroscopic ellipsometry over 1.5 eV < E < 6.0 eV. The results show good agreement between the ellipsometry and grazing‐incidence XPS, with slightly lower values for the neutron reflectometry. The role of surface contamination in each type of measurement is discussed. Published in 2004 by John Wiley & Sons, Ltd.