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Parametric analysis of the extraction of depth profile information from ARXPS data obtained on a silicon wafer sample
Author(s) -
Paynter R. W.,
Nolet D.
Publication year - 2003
Publication title -
surface and interface analysis
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.52
H-Index - 90
eISSN - 1096-9918
pISSN - 0142-2421
DOI - 10.1002/sia.1630
Subject(s) - wafer , x ray photoelectron spectroscopy , sample (material) , parametric statistics , silicon , surface (topology) , mathematics , dependency (uml) , analytical chemistry (journal) , set (abstract data type) , extraction (chemistry) , computational physics , materials science , chemistry , statistics , computer science , geometry , physics , optoelectronics , chromatography , nuclear magnetic resonance , software engineering , programming language
In this study a silicon wafer was analysed by angle‐resolved x‐ray photoelectron spectroscopy and the data compared with a calculation based upon a simple model of the sample surface. The parameters in the mathematical model were varied in groups of three and the sum‐squared difference between the calculation and the experimental results was plotted as an error surface. Most of the error surfaces were found to exhibit a well‐constrained minimum, indicating an optimum set of values for the parameters in question, but important examples of co‐dependency were also noted. Copyright © 2003 John Wiley & Sons, Ltd.