Premium
Non‐destructive analysis of ultrathin dielectric films
Author(s) -
Champaneria R.,
Mack P.,
White R.,
Wolstenholme J.
Publication year - 2003
Publication title -
surface and interface analysis
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.52
H-Index - 90
eISSN - 1096-9918
pISSN - 0142-2421
DOI - 10.1002/sia.1619
Subject(s) - overlayer , x ray photoelectron spectroscopy , silicon , chemical state , dielectric , materials science , substrate (aquarium) , oxide , analytical chemistry (journal) , silicon oxide , layer (electronics) , chemical composition , silicate , mineralogy , chemical engineering , chemistry , nanotechnology , optoelectronics , metallurgy , oceanography , silicon nitride , organic chemistry , chromatography , engineering , geology
Abstract Using angle‐resolved x‐ray photoelectron spectroscopy (ARXPS) it is possible to determine thickness, composition and depth distribution information for ultrathin samples in the region of ∼5–10 nm. With ARXPS determining both quantitative elemental information and chemical state information, it provides chemical state profiles from surface and buried layers non‐destructively. This paper illustrates how ARXPS data can provide measurements of overlayer thickness and interface layer thickness for high‐ k dielectric layers on silicon. Elemental and chemical state depth distribution information is also provided in the form of reconstructed concentration profiles. Further examples are provided where ARXPS has been used to study the influence of surface pretreatment of the silicon substrate prior to deposition of hafnium oxide. It will be shown that the pretreatment determines whether a silicon oxide or silicate is formed. Copyright © 2003 John Wiley & Sons, Ltd.