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AES and LEED study of well‐ordered oxide film grown on Cu–9at.%Al(111)
Author(s) -
Yoshitake M.,
Bera S.,
Yamauchi Y.
Publication year - 2003
Publication title -
surface and interface analysis
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.52
H-Index - 90
eISSN - 1096-9918
pISSN - 0142-2421
DOI - 10.1002/sia.1610
Subject(s) - oxide , scanning electron microscope , alloy , substrate (aquarium) , epitaxy , layer (electronics) , morphology (biology) , materials science , crystallography , diffraction , low energy electron diffraction , electron diffraction , analytical chemistry (journal) , chemistry , metallurgy , optics , nanotechnology , composite material , physics , genetics , oceanography , chromatography , biology , geology
An alloy of Cu–9at.%Al(111) has been oxidized in a low‐energy electron diffraction (LEED)/AES and a scanning AES instrument at elevated temperatures. Dosing with 1300 L of oxygen at 995 K gives rise to well‐ordered oxide layer formation on the Cu–9at.%Al alloy. The structure of the ordered oxide confirmed by LEED is ( $7/\sqrt{3} \times 7/\sqrt{3}$ ) R30°. The chemical state of the oxide was Al 2 O 3 . The morphology of the surface observed with SEM in the scanning AES instrument revealed flat oxide growth with triangular defects of the same orientation. The possible epitaxy between the alloy substrate and alumina layer has been discussed. Copyright © 2003 John Wiley & Sons, Ltd.