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Effect of surface orientation on the segregation kinetics of Sb from a Cu single crystal
Author(s) -
Terblans J. J.,
van Wyk G. N.
Publication year - 2003
Publication title -
surface and interface analysis
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.52
H-Index - 90
eISSN - 1096-9918
pISSN - 0142-2421
DOI - 10.1002/sia.1600
Subject(s) - vacancy defect , single crystal , diffusion , materials science , crystal (programming language) , surface energy , surface (topology) , activation energy , kinetics , crystallography , surface diffusion , effective diffusion coefficient , thermodynamics , analytical chemistry (journal) , chemistry , composite material , geometry , adsorption , physics , mathematics , quantum mechanics , chromatography , computer science , programming language , medicine , radiology , magnetic resonance imaging
In a previous theoretical study it has been suggested that the bulk vacancy formation energy near a surface depends on the orientation of the surface. It has been suggested also that this dependency of the vacancy formation energy would influence the bulk diffusion coefficient near the surface. The experimental results presented in this paper support this hypothesis. The experimental results were obtained by measuring the bulk‐to‐surface segregation of Sb for a Cu(111) single crystal with 0.088 at.% Sb and for a Cu(110) single crystal with 0.082 at.% Sb. The experimental results were fitted with the vacancy‐modified Darken model and it was clear that the bulk diffusion coefficient beneath the (110) surface is higher than the bulk diffusion coefficient beneath the (111) surface. Copyright © 2003 John Wiley & Sons, Ltd.