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Ion‐induced desorption by Ar + ions from Al, Cu and films of Cu grown on stainless steel
Author(s) -
Lozano M. P.,
Hilleret N.,
de Segovia J. L.
Publication year - 2003
Publication title -
surface and interface analysis
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.52
H-Index - 90
eISSN - 1096-9918
pISSN - 0142-2421
DOI - 10.1002/sia.1588
Subject(s) - desorption , copper , ion , analytical chemistry (journal) , argon , aluminium , oxygen , materials science , yield (engineering) , chemistry , metallurgy , adsorption , chromatography , organic chemistry
The ion‐induced desorption yield from pure aluminium, oxygen free high conductivity copper (OFHC) and films of copper electrodeposited on stainless steel, has been studied for unbaked samples and samples after 24 h of baking at 80, 120, 150 and 200 °C. Measurements were performed using argon ions of energy 3 keV and current density 2.5(×10 −8 )–10 −6 A cm −2 . The desorption is focused on those gases usually present in ultrahigh vacuum systems, such as H 2 , CO, CO 2 , CH 4 and C x H y . The ion‐induced desorption yields are presented as a function of the ion dose to the sample surface and are discussed according to the surface material and surface treatment. The lowest ion yields of 6.5 and 6.8 molecules per ion, respectively, are obtained for Al and Cu samples after a bake‐out of the system at 200 °C. Copyright © 2003 John Wiley & Sons, Ltd.