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Quantitative SIMS analysis of SiC
Author(s) -
Kudriavtsev Yu.,
Villegas A.,
Godines A.,
Asomoza R.,
Usov I.
Publication year - 2003
Publication title -
surface and interface analysis
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.52
H-Index - 90
eISSN - 1096-9918
pISSN - 0142-2421
DOI - 10.1002/sia.1561
Subject(s) - secondary ion mass spectrometry , cluster (spacecraft) , silicon carbide , ion , silicon , materials science , sensitivity (control systems) , matrix (chemical analysis) , analytical chemistry (journal) , oxygen , computational physics , chemistry , computer science , optoelectronics , physics , electronic engineering , composite material , engineering , environmental chemistry , organic chemistry , programming language
Abstract We performed a systematic study of ion‐implanted 6H‐SiC standards to find the optimal regimes for SIMS analysis. Relative sensitivity factors (RSFs) were acquired for operating conditions typical of practical SIMS applications. The experimental SiC RSFs were compared with those found for silicon:1 the matrix effect was insignificant in most cases. It was found that the SiO − cluster ion cannot represent correctly the real oxygen distribution in SiC. The physics of the effect is discussed. Copyright © 2003 John Wiley & Sons, Ltd.