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Surface morphology and interface structural analyses of Ti(film)/SiC(substrate) by PEEM, SXES, AES and XRD
Author(s) -
Labis Joselito,
Ohi Akihiko,
Hirai Masaaki,
Kusaka Masahiko,
Iwami Motohiro
Publication year - 2003
Publication title -
surface and interface analysis
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.52
H-Index - 90
eISSN - 1096-9918
pISSN - 0142-2421
DOI - 10.1002/sia.1500
Subject(s) - auger electron spectroscopy , materials science , substrate (aquarium) , synchrotron radiation , photoemission electron microscopy , spectroscopy , morphology (biology) , photoemission spectroscopy , x ray photoelectron spectroscopy , crystallography , scanning electron microscope , analytical chemistry (journal) , electron microscope , chemistry , chemical engineering , composite material , optics , physics , engineering , chromatography , quantum mechanics , biology , nuclear physics , genetics , geology , oceanography
A spectro‐microscopy study has been conducted on the Ti(film)/SiC(substrate) system. The variation in surface morphology of a heat‐treated Ti film on SiC was analysed by x‐ray photoemission electron microscopy (PEEM) and Auger electron spectroscopy (AES), whereas the interfacial reaction was characterized by synchrotron radiation‐induced soft x‐ray emission spectroscopy (SXES) and x‐ray diffraction (XRD). The formation of structures was observed on the Ti surface on 3C–SiC substrates at ∼850°C. The AES analysis on Ti/3C–SiC samples heated from 600°C to 900°C revealed an Si‐rich surface. The SXES and XRD characterizations on the structure of the interface have revealed the formation of Ti 5 Si 3 and TiC as the dominant reaction products. Copyright © 2003 John Wiley & Sons, Ltd.