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Real‐time observation of surface morphology at nanometer scale using x‐ray specular reflection
Author(s) -
Kawamura T.,
Watanabe Y.,
Fujikawa S.,
Bhunia S.,
Uchida K.,
Matsui J.,
Kagoshima Y.,
Tsusaka Y.
Publication year - 2003
Publication title -
surface and interface analysis
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.52
H-Index - 90
eISSN - 1096-9918
pISSN - 0142-2421
DOI - 10.1002/sia.1496
Subject(s) - specular reflection , nanometre , reflection (computer programming) , surface finish , optics , indium , chemistry , indium phosphide , analytical chemistry (journal) , materials science , epitaxy , layer (electronics) , nanotechnology , optoelectronics , composite material , physics , chromatography , computer science , programming language , gallium arsenide
Abstract The changes of surface morphology at nanometer scale during metal–organic vapour‐phase epitaxial growth of indium phosphide have been investigated by using x‐ray specular reflection at grazing incidence. At the low growth temperature of 400°C, large decreases of x‐ray beam intensity were observed, suggesting the formation of nanometer‐sized nuclei. At a higher growth temperature of 500°C, oscillations estimated to by layer‐by‐layer growth were observed, and roughness changes obtained from these oscillations were <0.01 nm, suggesting small‐island formation on the terrace or step‐edge fluctuation during the growth. Additionally, reflectivity increases at a growth temperature of 550°C were observed. Considering the reflectivity dependence on t ‐butylphosphine flow at 400°C, the change of reflectivity at 550°C is explained by the existence of phosphorus layers before the growth. Copyright © 2003 John Wiley & Sons, Ltd.