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XPS study of electron‐induced surface processes in trimethylsilane‐covered Ge(100) surfaces
Author(s) -
Wang P. W.,
Qi Y.,
Craig J. H.
Publication year - 2002
Publication title -
surface and interface analysis
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.52
H-Index - 90
eISSN - 1096-9918
pISSN - 0142-2421
DOI - 10.1002/sia.1469
Subject(s) - x ray photoelectron spectroscopy , trimethylsilane , silicon , irradiation , germanium , electron beam processing , analytical chemistry (journal) , photoelectric effect , materials science , electron , chemistry , chemical engineering , metallurgy , environmental chemistry , optoelectronics , physics , organic chemistry , quantum mechanics , nuclear physics , engineering
X‐ray photoelectron spectroscopy (XPS) was used to study the effects of electron beam irradiation of a multilayer film of trimethylsilane on a clean Ge(100) surface at −150°C. Core level C 1s, Si 2p, and Ge 3d photoelectrons were monitored at the same experimental conditions after various electron fluences. Electron irradiation is observed to cause an increase in the relative silicon surface concentration with a corresponding decrease in the carbon concentration. No change was evident in the surface germanium concentration, although electron irradiation resulted in an increasing concentration of C–Ge bonds with time. Simultaneously, the concentration of C–Si bonds decreased as a function of irradiation time. Growth of silicon islands is postulated as a possible explanation for this observation. The possible silicon island growth proposal is supported by the observed gradual decrease in concentration of Si–Si bonds, which would occur as the fraction of the surface covered by silicon decreases. Copyright © 2002 John Wiley & Sons, Ltd.