Premium
Evaluation of the silicon capping technique in SIMS
Author(s) -
Ng C. M.,
Wee A. T. S.,
Huan C. H. A.,
Ho C. S.,
Yakovlev N.,
See A.
Publication year - 2002
Publication title -
surface and interface analysis
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.52
H-Index - 90
eISSN - 1096-9918
pISSN - 0142-2421
DOI - 10.1002/sia.1443
Subject(s) - dopant , sputtering , silicon , doping , secondary ion mass spectrometry , analytical chemistry (journal) , oxide , monolayer , chemistry , ion , silicon oxide , materials science , thin film , optoelectronics , nanotechnology , metallurgy , chromatography , silicon nitride , organic chemistry
The effectiveness of the silicon capping technique in ultrashallow secondary ion mass spectrometry using 1 keV O 2 + at 56° incidence angle is investigated. It is shown that a capping layer of at least 20 nm is needed to ensure a steady‐state erosion rate when profiling the doped region. The matrix intensity is very sensitive to the presence of native oxide, and enhancement is evident for oxides as thin as one monolayer. The oxygen enhancement is further influenced by the high dopant concentration on the sputter surface. The present results favour the model that relates the surface spike present during depth profiling to the sputtering of native oxide. Copyright © 2002 John Wiley & Sons, Ltd.