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Accounting for anomalous oxidation states of silicon at the Si/SiO 2 interface
Author(s) -
Cerofolini G. F.,
Galati C.,
Renna L.
Publication year - 2002
Publication title -
surface and interface analysis
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.52
H-Index - 90
eISSN - 1096-9918
pISSN - 0142-2421
DOI - 10.1002/sia.1424
Subject(s) - silicon , x ray photoelectron spectroscopy , atmosphere (unit) , interface (matter) , hydrogen , signal (programming language) , materials science , analytical chemistry (journal) , crystallography , chemistry , physics , nuclear magnetic resonance , thermodynamics , optoelectronics , computer science , environmental chemistry , organic chemistry , gibbs isotherm , adsorption , programming language
The early oxidation stages of hydrogen‐terminated single‐crystalline Si(100) exposed to a diluted N 2 /N 2 O atmosphere at 850° C for different durations have been studied by XPS, following the evolution of the Si 2p signal. Evidence is given that the usual analysis, in terms of five pairs of peaks attributed to silicon in oxidation states from 0 to +4, does not account for the observed Si 2p signal. The spectrum is accurately reproduced only by assuming the existence of silicon in bonding configurations different from those usually assumed to occur at the Si/SiO 2 interface. Copyright © 2002 John Wiley & Sons, Ltd.