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Reflectometry studies of the oxidation kinetics of thin copper films
Author(s) -
Njeh Anouar,
Wieder Thomas,
Fuess Hartmut
Publication year - 2002
Publication title -
surface and interface analysis
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.52
H-Index - 90
eISSN - 1096-9918
pISSN - 0142-2421
DOI - 10.1002/sia.1421
Subject(s) - reflectometry , copper , thin film , diffraction , oxide , analytical chemistry (journal) , kinetics , materials science , activation energy , copper oxide , chemistry , optics , inorganic chemistry , metallurgy , nanotechnology , physics , time domain , chromatography , quantum mechanics , computer science , computer vision
Oxide formation on magnetron‐sputtered thin copper films (35 nm thickness) was studied by x‐ray reflectometry and grazing incidence x‐ray diffraction. The films were oxidized in air at temperatures of 175° C, 200° C, 225° C and 250° C. The reflectometry and the diffractometry data indicate the formation of Cu 2 O. A power‐law dependence of the oxide layer thickness was found. The activation energy obtained is weakly time dependent. Copyright © 2002 John Wiley & Sons, Ltd.