Premium
Study of InP(100) surface nitridation by x‐ray photoelectron spectroscopy
Author(s) -
Bideux L.,
OuldMetidji Y.,
Gruzza B.,
Matolin V.
Publication year - 2002
Publication title -
surface and interface analysis
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.52
H-Index - 90
eISSN - 1096-9918
pISSN - 0142-2421
DOI - 10.1002/sia.1394
Subject(s) - x ray photoelectron spectroscopy , auger electron spectroscopy , indium , indium phosphide , phosphide , analytical chemistry (journal) , substrate (aquarium) , argon , chemistry , auger , spectroscopy , metal , electron spectroscopy , materials science , metallurgy , atomic physics , optoelectronics , chemical engineering , physics , oceanography , organic chemistry , chromatography , quantum mechanics , nuclear physics , geology , gallium arsenide , engineering
Ion beam nitridation of indium phosphide (100) substrates was studied using x‐ray photoelectron spectroscopy (XPS) and Auger electron spectroscopy (AES). Argon ion bombardment of the InP(100) surface removes the native oxides and induces the formation of three‐dimensional indium clusters. After cleaning, the samples were nitrided in an ultrahigh vacuum chamber using a home‐made radiofrequency plasma source (13.56 MHz) that allows nitridation at low pressures (10 −4 Pa). We have studied the influence of temperature on the nitridation mechanisms. For low temperature ( T < 200°C), no variation of the metallic indium droplets was observed; for high temperature ( T > 270°C), the first layers of the substrate were damaged. The optimal temperature for the nitridation of InP(100) was found to be 250°C. Copyright © 2002 John Wiley & Sons, Ltd.