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Study of the NiTi/SiO 2 interface: analysis of the electronic distributions
Author(s) -
Jarrige Ignace,
Jonnard Philippe,
FrantzRodriguez Nadège,
Danaie Kamran,
Bosseboeuf Alain
Publication year - 2002
Publication title -
surface and interface analysis
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.52
H-Index - 90
eISSN - 1096-9918
pISSN - 0142-2421
DOI - 10.1002/sia.1390
Subject(s) - nickel titanium , interface (matter) , materials science , metallurgy , composite material , shape memory alloy , capillary number , capillary action
We present a study of the interface between a NiTi film deposited by magnetron d.c. sputtering and a SiO 2 film obtained by thermal oxidation. Electron‐induced X‐ray emission spectroscopy (EXES) is used to characterize the physicochemical environment around the Si atoms at the NiTi/SiO 2 interface, and to obtain information about the interfacial reactivity. From analysis of the Si 3p valence states, the composition and the thickness of the interfacial zone before and after annealing are deduced. The composition of the passivation layer, located at the surface of the metallic film, is determined by EXES and X‐ray Photoelectron Spectroscopy. Copyright © 2002 John Wiley & Sons, Ltd.