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Study of thin oxide films by ellipsometry and ARXPS
Author(s) -
Tichopádek P.,
Nebojsa A.,
Čechal J.,
Bábor P.,
Jurkovič P.,
Navrátil K.,
Šikola T.
Publication year - 2002
Publication title -
surface and interface analysis
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.52
H-Index - 90
eISSN - 1096-9918
pISSN - 0142-2421
DOI - 10.1002/sia.1354
Subject(s) - ellipsometry , x ray photoelectron spectroscopy , flashing , materials science , thin film , etching (microfabrication) , oxide , surface roughness , analytical chemistry (journal) , surface finish , contact angle , in situ , chemical engineering , chemistry , nanotechnology , composite material , layer (electronics) , chromatography , organic chemistry , metallurgy , engineering
In the paper the application of a simple spectroscopic ellipsometer for ex situ and in situ studies on SiO 2 films (including native oxides on Si) is reported. It is shown that the ellipsometer is a reliable tool for the monitoring of chemical etching of SiO 2 films with thicknesses of >10 nm. When the films become thinner, the results are strongly influenced by the contamination and roughness of their surface layers. The concentration profiles of these ultrathin films (<10 nm) were analysed by angle‐resolved XPS. Further, the ability of the ellipsometer to monitor the removal of native oxides on an Si(111) surface by thermal flashing under ultrahigh vacuum conditions is demonstrated as well. Copyright © 2002 John Wiley & Sons, Ltd.