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Surface passivation of gallium selenide by nitrogen implantation
Author(s) -
Márquez F.,
Segura A.,
Muñoz V.,
González G.
Publication year - 2002
Publication title -
surface and interface analysis
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.52
H-Index - 90
eISSN - 1096-9918
pISSN - 0142-2421
DOI - 10.1002/sia.1338
Subject(s) - nitrogen , x ray photoelectron spectroscopy , ion implantation , passivation , gallium , ion , single crystal , selenide , chemistry , materials science , inorganic chemistry , crystallography , metallurgy , nanotechnology , layer (electronics) , chemical engineering , organic chemistry , selenium , engineering
In this paper we report on the characterization of nitrogen‐implanted single‐crystal GaSe samples. Nitrogen atoms were implanted at 80 keV, with doses ranging from 4 × 10 13 to 10 15 N + ions cm −2 . Next, samples were aged in open air and characterized by small‐area XPS, together with an unimplanted clean surface, in order to quantify the effects of the nitrogen implantation. In general, we found that the oxidation was fully prevented in N + ‐implanted samples. Copyright © 2002 John Wiley & Sons, Ltd.