In situ  analysis using synchrotron radiation photoemission spectroscopy for initial oxidation of oxygen preadsorbed Si(001) surfaces induced by supersonic O 2  molecular beams | Zendy

Yoshigoe Akitaka | Zendy; Teraoka Yuden | Zendy

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In situ analysis using synchrotron radiation photoemission spectroscopy for initial oxidation of oxygen preadsorbed Si(001) surfaces induced by supersonic O 2 molecular beams

Author(s) -

Yoshigoe Akitaka,

Teraoka Yuden

Publication year - 2002

Publication title -

surface and interface analysis

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.52

H-Index - 90

eISSN - 1096-9918

pISSN - 0142-2421

DOI - 10.1002/sia.1332

Subject(s) - synchrotron radiation , photoemission spectroscopy , chemisorption , valence (chemistry) , chemistry , x ray photoelectron spectroscopy , analytical chemistry (journal) , spectroscopy , synchrotron , oxygen , inverse photoemission spectroscopy , atomic physics , optics , nuclear magnetic resonance , physics , adsorption , organic chemistry , chromatography , quantum mechanics

By means of synchrotron radiation photoemission spectroscopy we have performed in situ analyses for initial oxidation of oxidized Si(001) surfaces induced by supersonic O 2 molecular beams. In the Si 2p, Si 2s and valence band photoemission spectra with an angle integrated mode, the O 2 chemisorption processes induced by the O 2 translational energy of 3.0 eV were clarified as a function of the exposure time. The Si 2+ oxidation states, as well as Si 1+ , rapidly increased and then gradually decreased as a function of the O 2 dose. However, Si 4+ continued increasing gradually from the initial exposure. We found that the O 2 incident energy of 3.0 eV directly induced oxidation in the backbond of the second Si layer. Copyright © 2002 John Wiley & Sons, Ltd.

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