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In situ analysis using synchrotron radiation photoemission spectroscopy for initial oxidation of oxygen preadsorbed Si(001) surfaces induced by supersonic O 2 molecular beams
Author(s) -
Yoshigoe Akitaka,
Teraoka Yuden
Publication year - 2002
Publication title -
surface and interface analysis
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.52
H-Index - 90
eISSN - 1096-9918
pISSN - 0142-2421
DOI - 10.1002/sia.1332
Subject(s) - synchrotron radiation , photoemission spectroscopy , chemisorption , valence (chemistry) , chemistry , x ray photoelectron spectroscopy , analytical chemistry (journal) , spectroscopy , synchrotron , oxygen , inverse photoemission spectroscopy , atomic physics , optics , nuclear magnetic resonance , physics , adsorption , organic chemistry , chromatography , quantum mechanics
By means of synchrotron radiation photoemission spectroscopy we have performed in situ analyses for initial oxidation of oxidized Si(001) surfaces induced by supersonic O 2 molecular beams. In the Si 2p, Si 2s and valence band photoemission spectra with an angle integrated mode, the O 2 chemisorption processes induced by the O 2 translational energy of 3.0 eV were clarified as a function of the exposure time. The Si 2+ oxidation states, as well as Si 1+ , rapidly increased and then gradually decreased as a function of the O 2 dose. However, Si 4+ continued increasing gradually from the initial exposure. We found that the O 2 incident energy of 3.0 eV directly induced oxidation in the backbond of the second Si layer. Copyright © 2002 John Wiley & Sons, Ltd.