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How to measure accurately mass transport in thin films by AES
Author(s) -
Girardeaux C.,
Clugnet G.,
Erdélyi Z.,
Nyéki J.,
Bernardini J.,
Beke D.,
Rolland A.
Publication year - 2002
Publication title -
surface and interface analysis
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.52
H-Index - 90
eISSN - 1096-9918
pISSN - 0142-2421
DOI - 10.1002/sia.1323
Subject(s) - dissolution , solubility , nanocrystalline material , mass transport , thin film , diffusion , grain boundary , metal , kinetics , impurity , materials science , measure (data warehouse) , thermodynamics , kinetic energy , matrix (chemical analysis) , chemistry , analytical chemistry (journal) , metallurgy , nanotechnology , composite material , physics , engineering physics , microstructure , chromatography , computer science , organic chemistry , quantum mechanics , database
In this paper, we show that AES is a powerful technique to determine mass transport in thin films with model metal/metal thin‐layer structures (for systems without any compound formation). We show the conditions where grain boundary and/or bulk diffusion coefficients can be determined accurately at unusually low temperatures by monitoring the surface segregation kinetics of an impurity through a nanocrystalline film using the Hwang–Balluffi approach (systems with total solubility), and the dissolution of ultrathin deposits in a matrix using a model based on Martin's kinetic deterministic equations (systems with total solubility). Copyright © 2002 John Wiley & Sons, Ltd.