How to measure accurately mass transport in thin films by AES | Zendy

Girardeaux C. | Zendy; Clugnet G. | Zendy; Erdélyi Z. | Zendy; Nyéki J. | Zendy; Bernardini J. | Zendy; Beke D. | Zendy; Rolland A. | Zendy

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How to measure accurately mass transport in thin films by AES

Author(s) -

Girardeaux C.,

Clugnet G.,

Erdélyi Z.,

Nyéki J.,

Bernardini J.,

Beke D.,

Rolland A.

Publication year - 2002

Publication title -

surface and interface analysis

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.52

H-Index - 90

eISSN - 1096-9918

pISSN - 0142-2421

DOI - 10.1002/sia.1323

Subject(s) - dissolution , solubility , nanocrystalline material , mass transport , thin film , diffusion , grain boundary , metal , kinetics , impurity , materials science , measure (data warehouse) , thermodynamics , kinetic energy , matrix (chemical analysis) , chemistry , analytical chemistry (journal) , metallurgy , nanotechnology , composite material , physics , engineering physics , microstructure , chromatography , computer science , organic chemistry , quantum mechanics , database

In this paper, we show that AES is a powerful technique to determine mass transport in thin films with model metal/metal thin‐layer structures (for systems without any compound formation). We show the conditions where grain boundary and/or bulk diffusion coefficients can be determined accurately at unusually low temperatures by monitoring the surface segregation kinetics of an impurity through a nanocrystalline film using the Hwang–Balluffi approach (systems with total solubility), and the dissolution of ultrathin deposits in a matrix using a model based on Martin's kinetic deterministic equations (systems with total solubility). Copyright © 2002 John Wiley & Sons, Ltd.

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