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Application of AFM in microscopy and fabrication of micro/nanostructures
Author(s) -
Lopour F.,
Kalousek R.,
Škoda D.,
Spousta J.,
Matějka F.,
Šikola T.
Publication year - 2002
Publication title -
surface and interface analysis
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.52
H-Index - 90
eISSN - 1096-9918
pISSN - 0142-2421
DOI - 10.1002/sia.1315
Subject(s) - fabrication , materials science , etching (microfabrication) , silicon , nanotechnology , atomic force microscopy , nanostructure , microstructure , optoelectronics , composite material , medicine , alternative medicine , layer (electronics) , pathology
In the paper atomic force microscopy (AFM) studies of microstructures made by ion beams on Si and Au surfaces and by AFM local anodic oxidation on Ti thin films is presented. By using the AFM technique, etching limits of inert atoms in the production of silicon and silver grids were found. It was proved that the height of Ti oxide lines fabricated by AFM increases linearly with the voltage between a tip and a sample. On the other hand, the half‐width of the lines did not depend linearly on this voltage. The results are useful for experiments in the fabrication of nanoelectronic devices (e.g. single‐electron transistors). Copyright © 2002 John Wiley & Sons, Ltd.