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Is XPS combined with argon ion sputtering pertinent for depth profiling molybdenum‐implanted stainless‐steel layers?
Author(s) -
Mottu N.,
Vayer M.,
Benoit R.,
Erre R.
Publication year - 2002
Publication title -
surface and interface analysis
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.52
H-Index - 90
eISSN - 1096-9918
pISSN - 0142-2421
DOI - 10.1002/sia.1299
Subject(s) - x ray photoelectron spectroscopy , sputtering , argon , molybdenum , materials science , analytical chemistry (journal) , layer (electronics) , amorphous solid , ion , chemistry , metallurgy , crystallography , thin film , composite material , nanotechnology , chemical engineering , organic chemistry , chromatography , engineering
This paper discusses and compares depth profiles obtained on Mo‐implanted stainless steel by XPS and argon ion bombardment with those obtained by TRIM calculations and Rutherford backs scattering spectroscopy (RBS) analyses. The XPS profiles were highly dependent on the layer structure. When the structure remained highly crystallized, contamination carbon did not diffuse in the implanted layer and corrected Mo profiles were in agreement with RBS analyses. With a slight degradation of the implanted layer, corrected Mo profiles were still in agreement with RBS analyses but the carbon diffusion into the implanted layer was clearly visible (up to 10 at.%). When the implanted layer was completely amorphous, XPS profiles translated this amorphization and were highly dispersed. Copyright © 2002 John Wiley & Sons, Ltd.