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AES study on the interface diffusion and reaction between Cr layer and Si 3 N 4 /Si substrate
Author(s) -
Zhu Yongfa,
Wang Li,
Yao Wenqing,
Cao Lili
Publication year - 2002
Publication title -
surface and interface analysis
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.52
H-Index - 90
eISSN - 1096-9918
pISSN - 0142-2421
DOI - 10.1002/sia.1238
Subject(s) - auger electron spectroscopy , annealing (glass) , analytical chemistry (journal) , substrate (aquarium) , layer (electronics) , sputter deposition , diffusion , atmospheric temperature range , chemistry , sputtering , materials science , thin film , nanotechnology , metallurgy , physics , oceanography , chromatography , meteorology , nuclear physics , thermodynamics , geology
A Cr layer of thickness 190 nm was successfully deposited on the surface of Si 3 N 4 /Si substrate using magnetron sputtering in d.c. mode. Auger electron spectroscopy analysis indicated that the interface diffusion was very weak during the deposition. Annealing treatments in the temperature range 300–760 °C in high vacuum were performed in order to promote interface diffusion and reaction between the Cr layer and the Si 3 N 4 /Si substrate. Auger electron spectroscopy results indicated that the interface diffusion and reaction took place between the Cr layer and the Si 3 N 4 layer to form CrN x Si y species at 600 °C and was enhanced with increase in temperature. Simultaneously, Si depleted from Si substrate and diffused gradually into the Cr layer through the Si 3 N 4 layer. After the temperature reached 760 °C, most of the Si 3 N 4 species decomposed and a CrSi layer of ∼210 nm formed, indicating that the annealing temperature was the key step in the interface reaction. Interface diffusion and reaction can be enhanced by increasing the temperature or the annealing time. Copyright © 2002 John Wiley & Sons, Ltd.