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Comparison of the Tougaard, ARXPS, RBS and ellipsometry methods to determine the thickness of thin SiO 2 layers
Author(s) -
Semak B. S.,
van der Marel C.,
Tougaard S.
Publication year - 2002
Publication title -
surface and interface analysis
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.52
H-Index - 90
eISSN - 1096-9918
pISSN - 0142-2421
DOI - 10.1002/sia.1206
Subject(s) - x ray photoelectron spectroscopy , inelastic mean free path , analytical chemistry (journal) , ellipsometry , materials science , thin film , substrate (aquarium) , root mean square , scattering , mean free path , chemistry , optics , physics , nuclear magnetic resonance , nanotechnology , chromatography , oceanography , quantum mechanics , geology
The Tougaard and angle‐resolved x‐ray photoelectron spectroscopy (ARXPS) methods were compared with ellipsometry and Rutherford backscattering (RBS) for their ability to determine the amount of SiO 2 on an Si substrate. The Tougaard and ARXPS methods give generally consistent results (root‐mean‐square deviation ∼12%), whereas the deviation between the other techniques is significantly larger (∼30–40%). The Tougaard method gives consistent results for all angles of emission θ ≤ 60°. It is found also that the amount of SiO 2 determined by the two methods depends approximately linearly on the inelastic mean free path. The ARXPS method also depends on the accuracy with which one can separate the peak area of the bulk and the oxide part of the peaks. The correction for elastic scattering in the ARXPS method gives a reduction of only 5–7% in the determined amount of SiO 2 . Copyright © 2002 John Wiley & Sons, Ltd.