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Summary of ISO/TC 201 Standard: VI ISO 14706:2000— Surface chemical analysis — Determination of surface elemental contamination on silicon wafers by total reflection x‐ray fluorescence (TXRF) spectroscopy
Author(s) -
Gohshi Yohichi
Publication year - 2002
Publication title -
surface and interface analysis
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.52
H-Index - 90
eISSN - 1096-9918
pISSN - 0142-2421
DOI - 10.1002/sia.1194
Subject(s) - wafer , silicon , total internal reflection , analytical chemistry (journal) , contamination , x ray fluorescence , elemental analysis , chemistry , decomposition , atomic spectroscopy , materials science , spectroscopy , fluorescence , nanotechnology , inorganic chemistry , optics , metallurgy , environmental chemistry , optoelectronics , physics , ecology , organic chemistry , biology , quantum mechanics
This International Standard specifies a total reflection x‐ray fluorescence (TXRF) method for the measurement of the atomic surface density of elemental contamination on chemomechanically polished or epitaxial silicon wafer surfaces. This method is applicable to elements with atomic number from 16 (S) to 92 (U), and contamination elements with atomic surface densities from 1 × 10 10 to 1 × 10 14 atoms cm −2 . It is applicable also to contamination elements with atomic surface densities of 5 × 10 8 –5 × 10 12 atoms cm −2 using a vapour‐phase decomposition specimen preparation method. Copyright © 2002 John Wiley & Sons, Ltd.