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Spectroscopic ellipsometry for monitoring and control of surfaces, thin layers and interfaces
Author(s) -
Pickering C.
Publication year - 2001
Publication title -
surface and interface analysis
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.52
H-Index - 90
eISSN - 1096-9918
pISSN - 0142-2421
DOI - 10.1002/sia.1130
Subject(s) - ellipsometry , epitaxy , materials science , nucleation , surface finish , crystallinity , in situ , refractive index , layer (electronics) , surface roughness , silicon , thin film , optoelectronics , analytical chemistry (journal) , optics , nanotechnology , chemistry , composite material , physics , organic chemistry , chromatography
Spectroscopic ellipsometry can provide information non‐destructively on layer thickness, composition, refractive index, crystallinity and surface/interface roughness. This article discusses its use for ex situ /in‐line monitoring and in situ /real‐time control. Examples are given based on silicon epitaxial surfaces, GaN nucleation layers, SiGe/Si and other multilayer structures. Real‐time data analysis methods are discussed and in situ spectroscopic ellipsometry is shown to provide insights into surface effects during SiGe epitaxial growth. © Crown Copyright 2001. Published by John Wiley & Sons, Ltd.