Spectroscopic ellipsometry for monitoring and control of surfaces, thin layers and interfaces | Zendy

Pickering C. | Zendy

AI Assistant Blog Pricing

Home ZAIA Blog

Premium

Spectroscopic ellipsometry for monitoring and control of surfaces, thin layers and interfaces

Author(s) -

Pickering C.

Publication year - 2001

Publication title -

surface and interface analysis

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.52

H-Index - 90

eISSN - 1096-9918

pISSN - 0142-2421

DOI - 10.1002/sia.1130

Subject(s) - ellipsometry , epitaxy , materials science , nucleation , surface finish , crystallinity , in situ , refractive index , layer (electronics) , surface roughness , silicon , thin film , optoelectronics , analytical chemistry (journal) , optics , nanotechnology , chemistry , composite material , physics , organic chemistry , chromatography

Spectroscopic ellipsometry can provide information non‐destructively on layer thickness, composition, refractive index, crystallinity and surface/interface roughness. This article discusses its use for ex situ /in‐line monitoring and in situ /real‐time control. Examples are given based on silicon epitaxial surfaces, GaN nucleation layers, SiGe/Si and other multilayer structures. Real‐time data analysis methods are discussed and in situ spectroscopic ellipsometry is shown to provide insights into surface effects during SiGe epitaxial growth. © Crown Copyright 2001. Published by John Wiley & Sons, Ltd.

This content is not available in your region!

Continue researching here.

Having issues? You can contact us here

Accelerating Research