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Two‐band photoluminescence spectra from nanometre Si particle‐embedded Si oxide films
Author(s) -
Ma S. Y.
Publication year - 2001
Publication title -
surface and interface analysis
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.52
H-Index - 90
eISSN - 1096-9918
pISSN - 0142-2421
DOI - 10.1002/sia.1112
Subject(s) - photoluminescence , sputtering , x ray photoelectron spectroscopy , analytical chemistry (journal) , materials science , ultraviolet , sputter deposition , nanometre , spectral line , oxide , chemistry , optoelectronics , thin film , nanotechnology , chemical engineering , physics , chromatography , astronomy , engineering , composite material , metallurgy
Nanometre Si particle (NSP)‐embedded Si oxide films were deposited on p‐type Si substrates by the r.f. magnetron sputtering technique using Si and SiO 2 composite sputtering targets. All samples were annealed in a nitrogen ambient at 600° for 30 min. X‐ray photoelectron spectroscopy and optical absorption measurements were performed on the samples. The sizes of the NSPs were increased by increasing the relative area of the Si wafer in the co‐sputtering target. The photoluminescence spectra of all the samples exhibited two bands with their peaks located at 370 nm (3.4 eV) in the ultraviolet spectral range and 650–665 nm (1.9 eV) in the orange–red spectral range. The experimental results indicate that there are two types of photoexcitation processes in the NSP‐embedded Si oxide films: one for the orange–red band occurring in the NSPs and the other for the ultraviolet band occurring in the SiO 2 layers. Copyright © 2001 John Wiley & Sons, Ltd.