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Characterization of Ge δ‐doped Si(111) with RBS channelling
Author(s) -
Yuhara J.,
Morita K.,
Falta J.,
Müller B. H.,
Hornvon Hoegen M.
Publication year - 2001
Publication title -
surface and interface analysis
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.52
H-Index - 90
eISSN - 1096-9918
pISSN - 0142-2421
DOI - 10.1002/sia.1106
Subject(s) - channelling , rutherford backscattering spectrometry , doping , epitaxy , materials science , molecular beam epitaxy , crystallography , full width at half maximum , lattice (music) , germanium , characterization (materials science) , crystal (programming language) , crystal structure , analytical chemistry (journal) , silicon , layer (electronics) , chemistry , thin film , ion , optoelectronics , nanotechnology , physics , organic chemistry , chromatography , computer science , acoustics , programming language
The crystalline quality of the Si cap layer, the lattice location and the depth distribution of δ‐doped Ge layers in Si(111) crystals grown by molecular beam epitaxy at low and high temperatures have been studied by means of double‐grazing‐angle Rutherford backscattering spectrometry (RBS), RBS channelling and atomic force microscopy. The crystalline quality of the Si cap layer grown at high temperature is excellent, but there are some lattice defects in the interface or in the cap layer grown at low temperature. The RBS channelling measurements show that most of the Ge atoms occupy the Si substitutional sites. The full width at half‐maximum in the depth distribution of δ‐doped Ge in the Si(111) crystal is determined to be 13 ± 5 Å. Copyright © 2001 John Wiley & Sons, Ltd.