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Chemical structure and interface reaction of LaCoO 3 /Si thin‐film system
Author(s) -
Zhang Yingxia,
Zhu Yongfa,
Ye Xiaoyan,
Cao Lili
Publication year - 2001
Publication title -
surface and interface analysis
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.52
H-Index - 90
eISSN - 1096-9918
pISSN - 0142-2421
DOI - 10.1002/sia.1062
Subject(s) - x ray photoelectron spectroscopy , amorphous solid , calcination , substrate (aquarium) , thin film , diffusion , oxide , analytical chemistry (journal) , chemical reaction , materials science , chemical state , chemistry , chemical engineering , crystallography , catalysis , nanotechnology , metallurgy , thermodynamics , biochemistry , oceanography , physics , chromatography , engineering , geology
An LaCoO 3 thin film was prepared on Si(111) substrate successfully using an amorphous heteronuclear complex, LaCo(DTPA)·6H 2 O, as a precursor. The surface chemical structures and interface reaction of LaCoO 3 /Si thin film were studied by XPS and AES techniques. The AES depth profile analysis indicated that the composition of the LaCoO 3 thin film was relatively homogeneous with depth. Interface diffusion and chemical reaction took place at the interface between the LaCoO 3 layer and the Si substrate during thermal treatment. The linear least‐squares fitting of the AES depth profile analysis indicated that the LaCoO 3 decomposed into simple a oxide of La and Co at the interface. An SiO 2 species also formed at the interface when the sample was treated at relatively high temperature. Interface diffusion and reaction were intensified with increasing calcination temperature and time. When the temperature was <650 °C, the interface species were mainly La 2 O 3 and CoO simple oxides. After the temperature reached 700 °C, the interface species were La 2 O 3 , CoO and SiO 2 . Copyright © 2001 John Wiley & Sons, Ltd.