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Study of the diffusion behaviour of MoO 3 and ZnO on oxide thin films by SR‐TXRF
Author(s) -
Xu Weiming,
Xu Junqian,
Wu Nianzu,
Yan Jingfeng,
Zhu Yongfa,
Huang Yuying,
He Wei,
Xie Youchang
Publication year - 2001
Publication title -
surface and interface analysis
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.52
H-Index - 90
eISSN - 1096-9918
pISSN - 0142-2421
DOI - 10.1002/sia.1060
Subject(s) - sublimation (psychology) , thin film , diffusion , oxide , materials science , surface diffusion , analytical chemistry (journal) , diffusion process , chemistry , adsorption , nanotechnology , metallurgy , psychology , knowledge management , physics , innovation diffusion , chromatography , computer science , psychotherapist , thermodynamics
The diffusion process of MoO 3 and ZnO on stable oxide thin films (SiO 2 , Al 2 O 3 , TiO 2 ) was investigated mainly by means of synchrotron‐radiation‐excited total reflection x‐ray fluorescence spectroscopy (SR‐TXRF). A stripe of MoO 3 or ZnO on the oxide thin film was used as the diffusion source. After thermal treatment, MoO 3 diffused onto the surface of those films and formed a monolayer or a submonolayer. The diffusion capacity and the diffusion rate of MoO 3 on each film differed significantly. Sublimation of MoO 3 also was detected during the diffusion process. A possible explanation for all the phenomena is the combination of surface diffusion onto the surface of the support and transportation via the gas phase. By contrast, ZnO hardly diffuses onto the surface of the film due to its high melting point. Copyright © 2001 John Wiley & Sons, Ltd.