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Interface diffusion and reaction between Ti layer and Si 3 N 4 /Si substrate
Author(s) -
Zhu Yongfa,
Wang Li,
Yao Wenqing,
Cao Lili
Publication year - 2001
Publication title -
surface and interface analysis
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.52
H-Index - 90
eISSN - 1096-9918
pISSN - 0142-2421
DOI - 10.1002/sia.1059
Subject(s) - annealing (glass) , auger electron spectroscopy , silicide , silicon , analytical chemistry (journal) , sputtering , materials science , atmospheric temperature range , substrate (aquarium) , crystallography , chemistry , thin film , metallurgy , nanotechnology , physics , oceanography , chromatography , geology , meteorology , nuclear physics
Abstract A Ti layer of thickness 270 nm was deposited successfully on the surface of Si 3 N 4 /Si substrate using the d.c. sputtering technique. Auger electron spectroscopy (AES) analysis indicates that the Ti layer reduced the native SiO 2 layer that existed on the surface of the Si 3 N 4 film to form TiO x and Si species at the interface during deposition. The interface diffusion and reaction between the Ti layer and Si 3 N 4 /Si substrate was promoted significantly by annealing treatments in the temperature range 300–700 °C in a high vacuum. At temperatures below 600 °C, only very little silicide formed. With increasing annealing temperature, TiSi species formed rapidly. When the temperature reached 700 °C, both TiSi and TiSi 2 species formed in the interlayer. The formation of TiSi and TiSi 2 species was governed mainly by the interface reaction when the annealing time was short. Silicon in the interlayer mainly came from the Si 3 N 4 layer at low temperature or a short annealing time, otherwise it mainly came from the depletion of Si substrate at high temperature or a long annealing time. Copyright © 2001 John Wiley & Sons, Ltd.