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Interface diffusion and reaction between TiO 2 film photocatalyst and aluminium alloy substrate
Author(s) -
Zhu Yongfa,
Zhang Li,
Wang Li,
Tan Ruiqin,
Cao Lili
Publication year - 2001
Publication title -
surface and interface analysis
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.52
H-Index - 90
eISSN - 1096-9918
pISSN - 0142-2421
DOI - 10.1002/sia.1041
Subject(s) - annealing (glass) , materials science , alloy , aluminium , anatase , photocatalysis , layer (electronics) , chemical engineering , metal , substrate (aquarium) , diffusion , metallurgy , composite material , catalysis , chemistry , organic chemistry , oceanography , physics , engineering , thermodynamics , geology
A compact TiO 2 film of thickness ∼300 nm was deposited on aluminium alloy substrates by using the sol–gel method with Ti(OBu) 4 as a precursor. It was found that Al in the alloy substrate not only diffused into the TiO 2 layer but also reacted with O 2 that diffused from the air to form an interface layer of Al 2 O 3 species on the interface between the TiO 2 layer and the aluminium alloy substrate during the annealing treatment. With annealing temperature and time increasing, the diffusion of Al was promoted significantly. Although Al diffused into the TiO 2 layer and existed as a metallic in the layer, it did not interact chemically with the TiO 2 layer. Because it was only a physical mixture of metallic Al and TiO 2 species in the layer, Al did not enter the lattice of TiO 2 . The interface diffusion only influenced the ultraviolet absorbency of the TiO 2 film photocatalyst and had no influence on the peak position. The diffusion and existence of metallic Al in the TiO 2 layer did not influence the formation of a TiO 2 layer with the anatase structure. Copyright © 2001 John Wiley & Sons, Ltd.