Interdiffusion coefficients and conductivity in gold/nickel bilayer thin films on silicon(111) wafers | Zendy

AbdulLettif A. M. | Zendy; Rammo N. N. | Zendy; Makadsi M. N. | Zendy

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Interdiffusion coefficients and conductivity in gold/nickel bilayer thin films on silicon(111) wafers

Author(s) -

AbdulLettif A. M.,

Rammo N. N.,

Makadsi M. N.

Publication year - 2001

Publication title -

surface and interface analysis

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.52

H-Index - 90

eISSN - 1096-9918

pISSN - 0142-2421

DOI - 10.1002/sia.1020

Subject(s) - x ray photoelectron spectroscopy , nickel , wafer , annealing (glass) , analytical chemistry (journal) , silicon , sheet resistance , bilayer , thin film , materials science , atmospheric temperature range , conductivity , diffusion , chemistry , layer (electronics) , metallurgy , nanotechnology , nuclear magnetic resonance , membrane , thermodynamics , biochemistry , physics , chromatography

Interdiffusion in the gold/nickel bilayer thin films deposited on silicon(111) wafers in the temperature range 200–500 °C has been studied using x‐ray photoelectron spectroscopy (XPS), sheet resistance measurements (SRM) and x‐ray diffraction. Two independent methods have been used to determine the diffusion coefficients: the accumulation concentration of nickel on the gold surface using XPS; and the variation of sheet resistance as a function of annealing time and temperature. The diffusion coefficients deduced from XPS and SRM are (4.0 × 10 −11 cm 2 s −1 ) exp(−0.79 eV/kT) and (4.8 × 10 −11 cm 2 s −1 ) exp(−0.83 eV/kT), respectively. It is shown that diffusion of nickel through the gold layer causes a considerable loss in conductivity of the bilayer thin films. Copyright © 2001 John Wiley & Sons, Ltd.

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