Dynamic SIMS characterization of interface structure of Ag/Alq 3 /NPB/ITO model devices | Zendy

Song Weijie | Zendy; Li Zhanping | Zendy; So S. K. | Zendy; Qiu Yong | Zendy; Zhu Youngfa | Zendy; Cao Lili | Zendy

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Dynamic SIMS characterization of interface structure of Ag/Alq 3 /NPB/ITO model devices

Author(s) -

Song Weijie,

Li Zhanping,

So S. K.,

Qiu Yong,

Zhu Youngfa,

Cao Lili

Publication year - 2001

Publication title -

surface and interface analysis

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.52

H-Index - 90

eISSN - 1096-9918

pISSN - 0142-2421

DOI - 10.1002/sia.1016

Subject(s) - oled , indium tin oxide , aluminium , oxide , materials science , secondary ion mass spectrometry , analytical chemistry (journal) , biphenyl , chemistry , optoelectronics , layer (electronics) , nanotechnology , ion , organic chemistry , chromatography , metallurgy

In this study, we first profiled model organic light‐emitting diodes (OLEDs) with the structure Ag/tris(8‐hydroxyquinoline) aluminium (Alq 3 )/ N , N ′‐diphenyl‐ N , N ′‐bis[1‐naphthyl‐(1,1′‐biphenyl]‐4,4′‐diamine (NPB)/indium tin oxide (ITO) using dynamic SIMS. The element distribution across the multilayer and the dynamic SIMS spectra at different regions were obtained. It was shown that dynamic SIMS is a powerful tool in profiling OLEDs. Clear diffusion of Ag into the Alq 3 layer was observed. The experimental results also revealed that a distinct interface for Alq 3 /NPB can be obtained using dynamic SIMS. Copyright © 2001 John Wiley & Sons, Ltd.

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