Open AccessLarge Area Digital X‐ray Imaging
Author(s) -
Tao S.,
Karim K. S.,
Servati P.,
Lee C.H.,
Nathan A.
Publication year - 2003
Publication title -
sensors update
Language(s) - English
Resource type - Journals
eISSN - 1616-8984
pISSN - 1432-2404
DOI - 10.1002/seup.200390002
Subject(s) - fabrication , materials science , active matrix , optoelectronics , schottky diode , image sensor , transistor , threshold voltage , leakage (economics) , parasitic extraction , thin film transistor , nanotechnology , electrical engineering , diode , voltage , computer science , engineering , artificial intelligence , medicine , alternative medicine , layer (electronics) , pathology , economics , macroeconomics
This chapter reviews amorphous silicon devices for large area flat panel imaging technology. We present Schottky and p‐i‐n diode image sensors and elaborate on their operating principles, electrical and optoelectronic characteristics including stability, along with the challenges associated with reduction of the dark current. Issues pertinent to sensor‐thin film transistor integration for different active matrix pixel architectures for high fill factor imaging arrays are presented along with optimization of materials and processing conditions for reduced threshold voltage shift, reduced parasitics and leakage current, and enhanced mechanical integrity. Extension of the current fabrication processes to low (∼120°C) temperature, enabling fabrication of flexible imaging array (on plastic substrates), is also discussed.