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Paper No P38: Electrical and Optical Stabilities of Amorphous InGaZnO Thin Films for Flexible Sensing Transistors
Author(s) -
Li Yuanjie,
Jiang Kai,
Fu Yanhua,
Liu Zilong
Publication year - 2013
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1002/sdtp.6
Subject(s) - materials science , amorphous solid , thin film transistor , annealing (glass) , thin film , variable range hopping , sapphire , transmittance , optoelectronics , electrical resistivity and conductivity , sputter deposition , atmospheric temperature range , analytical chemistry (journal) , thermal conduction , sputtering , optics , nanotechnology , composite material , crystallography , chemistry , electrical engineering , engineering , layer (electronics) , laser , physics , chromatography , meteorology
Amorphous oxide semiconductor InGaZnO (a‐IGZO) thin films were deposited on glass and sapphire substrates using RF magnetron sputtering at room temperature. H 2 annealing effect on the electrical conduction, optical transmittance, and structural properties of a‐IGZO films has been systematically studied. Temperature‐dependent electrical conductivity of a‐IGZO films exhibited n‐type degenerated conduction behavior in the range of 10–300 K. Electrical properties of the films do not fit with variable range hopping carrier transport model. Optical transmission of a‐IGZO films has been enhanced by H 2 annealing at elevated temperatures. Fourier‐Transform Infrared Spectroscopy analysis indicated formation of O‐H bonding state in H 2 ‐annealed a‐IGZO films which is thermally stable up to 300°C. Electron concentration of a‐IGZO films decreases with annealing temperature above 300°C resulting from the reduced H incorporation from OH absorption.