Paper No 8.4: Self‐Aligned Oxide Thin‐Film Transistors Fabricated Utilizing an Excimer Laser and the Dependence of Their Characteristics on Irradiation Conditions | Zendy

Nakata Mitsuru | Zendy; Tsuji Hiroshi | Zendy; Fujisaki Yoshihide | Zendy; Sato Hiroto | Zendy; Nakajima Yoshiki | Zendy; Takei Tatsuya | Zendy; Yamamoto Toshihiro | Zendy

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Paper No 8.4: Self‐Aligned Oxide Thin‐Film Transistors Fabricated Utilizing an Excimer Laser and the Dependence of Their Characteristics on Irradiation Conditions

Author(s) -

Nakata Mitsuru,

Tsuji Hiroshi,

Fujisaki Yoshihide,

Sato Hiroto,

Nakajima Yoshiki,

Takei Tatsuya,

Yamamoto Toshihiro

Publication year - 2013

Publication title -

sid symposium digest of technical papers

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.351

H-Index - 44

eISSN - 2168-0159

pISSN - 0097-966X

DOI - 10.1002/sdtp.54

Subject(s) - thin film transistor , materials science , excimer laser , optoelectronics , lasing threshold , transistor , electrode , laser , irradiation , excimer , optics , electrical engineering , nanotechnology , voltage , layer (electronics) , chemistry , wavelength , physics , engineering , nuclear physics

Excimer lasing, which can reduce InGaZnO 4 (IGZO) resistance, makes it possible to form source and drain regions in IGZO thin‐film transistors (TFTs). Self‐aligned bottom‐gate IGZO‐TFTs can be fabricated by back‐side excimer laser irradiation, using a gate electrode as a mask. We have investigated the dependence on laser energy density of the TFT characteristics and IGZO performance. These results indicate that this method offers a wide process margin and is compatible with large‐area processing.

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