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Paper No 8.4: Self‐Aligned Oxide Thin‐Film Transistors Fabricated Utilizing an Excimer Laser and the Dependence of Their Characteristics on Irradiation Conditions
Author(s) -
Nakata Mitsuru,
Tsuji Hiroshi,
Fujisaki Yoshihide,
Sato Hiroto,
Nakajima Yoshiki,
Takei Tatsuya,
Yamamoto Toshihiro
Publication year - 2013
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1002/sdtp.54
Subject(s) - thin film transistor , materials science , excimer laser , optoelectronics , lasing threshold , transistor , electrode , laser , irradiation , excimer , optics , electrical engineering , nanotechnology , voltage , layer (electronics) , chemistry , wavelength , physics , engineering , nuclear physics
Excimer lasing, which can reduce InGaZnO 4 (IGZO) resistance, makes it possible to form source and drain regions in IGZO thin‐film transistors (TFTs). Self‐aligned bottom‐gate IGZO‐TFTs can be fabricated by back‐side excimer laser irradiation, using a gate electrode as a mask. We have investigated the dependence on laser energy density of the TFT characteristics and IGZO performance. These results indicate that this method offers a wide process margin and is compatible with large‐area processing.