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Paper No 7.3: Solution‐Processed Oxide Semiconductors for High‐Mobility Thin‐Film Transistors
Author(s) -
Jang Jin,
Avis Christophe,
Goo Kim Youn,
Hwang Hye Rim
Publication year - 2013
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1002/sdtp.53
Subject(s) - thin film transistor , materials science , oxide thin film transistor , equivalent oxide thickness , oxide , optoelectronics , fabrication , amorphous solid , dielectric , indium tin oxide , transistor , semiconductor , solution process , thin film , nanotechnology , electrical engineering , layer (electronics) , metallurgy , gate oxide , chemistry , crystallography , medicine , alternative medicine , engineering , voltage , pathology
Abstract We studied the fabrication and performance of solution‐processed oxide thin‐film transistors. Various amorphous and polycrystalline semiconductors were studied, among them are zinc tin oxide, tin oxide, and indium oxide. Mobilities over 20 cm 2 /Vs are achieved. The use of solution process high‐k dielectrics such as aluminum oxide or hafnium oxide allow the TFTs to be used as low power‐consuming and stable devices for display applications.